Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications
Author(s) -
S. H. Misha,
Nusrat Tamanna,
Jiyong Woo,
Sangsul Lee,
Jeonghwan Song,
Jaeku Park,
Seokjae Lim,
Hyunsang Hwang
Publication year - 2015
Publication title -
ecs solid state letters
Language(s) - English
Resource type - Journals
eISSN - 2162-8742
pISSN - 2162-8750
DOI - 10.1149/2.0011504ssl
Subject(s) - resistive random access memory , reliability (semiconductor) , materials science , doping , nitrogen , bit (key) , optoelectronics , protein filament , power (physics) , electrical engineering , computer science , chemistry , composite material , physics , computer security , organic chemistry , quantum mechanics , voltage , engineering
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