Open Access(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga2O3 Devices?
Author(s) -
Yuhao Zhang,
Boyan Wang,
Ming Xiao,
Joseph Spencer,
Ruizhe Zhang,
Jack Knoll,
Christina DiMarino,
GuoQuan Lu,
Kohei Sasaki,
Cyril Buttay
Publication year - 2021
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/10405.0021ecst
Subject(s) - thermal resistance , materials science , junction temperature , optoelectronics , schottky diode , electronics , power semiconductor device , thermal conductivity , electrical engineering , engineering physics , wide bandgap semiconductor , thermal , power (physics) , diode , engineering , composite material , physics , voltage , meteorology , quantum mechanics
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