Open AccessPattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions
Author(s) -
V. Mohammadi,
Wiebe de Boer,
T.L.M. Scholtes,
Lis K. Nanver
Publication year - 2012
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.3700937
Subject(s) - diborane , chemical vapor deposition , materials science , deposition (geology) , layer (electronics) , wafer , volumetric flow rate , boundary layer , boron , analytical chemistry (journal) , radius , diffusion , chemistry , composite material , mechanics , thermodynamics , nanotechnology , geology , organic chemistry , computer science , paleontology , physics , computer security , chromatography , sediment
The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yields lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates
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