Temperature Dependent Emission of Strontium-Barium Orthosilicate (Sr2−xBax)SiO4:Eu2+ Phosphors for High-Power White Light-Emitting Diodes | Zendy

Ivan Baginskiy | Zendy; RuShi Liu | Zendy; C. L. Wang | Zendy; Rong-Ji Lin | Zendy; Yadong Yao | Zendy

Open Access

Temperature Dependent Emission of Strontium-Barium Orthosilicate (Sr_2−xBa_x)SiO₄:Eu₂₊ Phosphors for High-Power White Light-Emitting Diodes

Author(s) -

Ivan Baginskiy,

RuShi Liu,

C. L. Wang,

Rong-Ji Lin,

Yadong Yao

Publication year - 2011

Publication title -

journal of the electrochemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.3625282

Subject(s) - orthosilicate , phosphor , barium , analytical chemistry (journal) , materials science , strontium , emission spectrum , quenching (fluorescence) , mineralogy , chemistry , tetraethyl orthosilicate , fluorescence , spectral line , optics , optoelectronics , metallurgy , nanotechnology , physics , organic chemistry , chromatography , astronomy

Samples of (Sr1.9 xBax)SiO4:Eu0.1 were synthesized by a solid-state reaction. The maximum emission intensity under 460 nm excitation was obtained at a Ba content, x, of 1.6. All Sr1.9 xBaxSiO4:Eu0.1 samples except for Ba1.9SiO4:Eu0.1 exhibited a temperature-driven blue-shift of the emission band. The thermostability of emission in (Sr1.9 xBax)SiO4:Eu0.1 depended strongly on the Ba/Sr ratio. The thermal quenching temperature reached its maximum at a Ba concentration x of 1.2–1.6 and was much lower for Ba1.9SiO4:Eu 2þ 0.1.

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