Open AccessRealization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory
Author(s) -
Feng Zhang,
Xiaoyan Gan,
Xiaomin Li,
Liang Wu,
Xiangdong Gao,
RenKui Zheng,
Yong He,
Xinjun Liu,
Rui Yang
Publication year - 2011
Publication title -
electrochemical and solid-state letters
Language(s) - English
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/1.3617442
Subject(s) - nanorod , materials science , non volatile memory , optoelectronics , realization (probability) , resistive random access memory , memory cell , resistive touchscreen , nanotechnology , rectification , computer science , electrical engineering , transistor , voltage , statistics , mathematics , engineering , computer vision
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