Depth Profiling of La[sub 2]O[sub 3]∕HfO[sub 2] Stacked Dielectrics for Nanoelectronic Device Applications | Zendy

Husam N. Alshareef | Zendy; S. Mure | Zendy; P. Majhi | Zendy; Manuel QuevedoLopez | Zendy

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Depth Profiling of La[sub 2]O[sub 3]∕HfO[sub 2] Stacked Dielectrics for Nanoelectronic Device Applications

Author(s) -

Husam N. Alshareef,

S. Mure,

P. Majhi,

Manuel QuevedoLopez

Publication year - 2011

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.3526141

Subject(s) - materials science , dielectric , profiling (computer programming) , optoelectronics , high κ dielectric , nanotechnology , computer science , operating system

Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society

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