Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel | Zendy

Radu A. Sporea | Zendy; Xiaojun Guo | Zendy; J. M. Shan | Zendy; S. Ravi P. Silva | Zendy

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Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel

Author(s) -

Radu A. Sporea,

Xiaojun Guo,

J. M. Shan,

S. Ravi P. Silva

Publication year - 2010

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.3481265

Subject(s) - transistor , electronic circuit , electronics , analogue electronics , field effect transistor , voltage , electrical engineering , materials science , electronic engineering , computer science , optoelectronics , engineering

The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT version can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices

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