Using Fluorine-Ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC Poly-Si | Zendy

Chien-Chih Chen | Zendy; YewChung Sermon Wu | Zendy

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Using Fluorine-Ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC Poly-Si

Author(s) -

Chien-Chih Chen,

YewChung Sermon Wu

Publication year - 2010

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.3481231

Subject(s) - materials science , passivation , dangling bond , thin film transistor , crystallization , amorphous solid , polycrystalline silicon , layer (electronics) , ion implantation , amorphous silicon , silicon , optoelectronics , chemical engineering , ion , crystalline silicon , nanotechnology , crystallography , chemistry , organic chemistry , engineering

The grain boundaries which included dangling bonds in Ni-metalinduced lateral crystallization (NILC) poly-Si TFT would trap Ni and NiSi2 precipitates. This phenomenon resulted in threshold voltage shifting and lower field-effect mobility. To resolve this issue, the a-Si layer with fluorine-ion implanted was used as gettering layer to reduce Ni contamination and passivate the dangling bonds in the active layer. It was found that the F-G layer could not only reduce the Ni contamination but also passivate the defects in NILC poly-Si.

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