High Quality SiO[sub 2] Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application | Zendy

Tao Chen | Zendy; Ryoichi Ishihara | Zendy; Kees Beenakker | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

High Quality SiO[sub 2] Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application

Author(s) -

Tao Chen,

Ryoichi Ishihara,

Kees Beenakker

Publication year - 2010

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.3430659

Subject(s) - materials science , thin film transistor , inductively coupled plasma , optoelectronics , chemical vapor deposition , plasma , oxide , excimer laser , annealing (glass) , nanotechnology , laser , layer (electronics) , composite material , optics , metallurgy , physics , quantum mechanics

In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated under 100°C by excimer laser annealing. The electron mobility can reach 225 cm2/V s. The interface density of SiO2 is comparable with that of thermal oxide. The high quality gate oxide is very suitable for fabricating high performance TFTs for large-area flexible displays on plastics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research