Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer | Zendy

ChienChih Chen | Zendy; YewChung Sermon Wu | Zendy; Teng-Fu Tung | Zendy; Hung-Yu Wu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer

Author(s) -

ChienChih Chen,

YewChung Sermon Wu,

Teng-Fu Tung,

Hung-Yu Wu

Publication year - 2010

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.3375627

Subject(s) - materials science , passivation , optoelectronics , thin film transistor , fabrication , layer (electronics) , silicon , crystallization , polycrystalline silicon , nanotechnology , chemical engineering , medicine , alternative medicine , pathology , engineering

Fluorinated-silicate-glass (FSG) was combined with Ni-metalinduced lateral crystallization (NILC) polycrystalline silicon thinfilm transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research