Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth | Zendy

Amir Sammak | Zendy; Wiebe de Boer | Zendy; A. van den Bogaard | Zendy; Lis K. Nanver | Zendy

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Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

Author(s) -

Amir Sammak,

Wiebe de Boer,

A. van den Bogaard,

Lis K. Nanver

Publication year - 2010

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.3367956

Subject(s) - trimethylgallium , epitaxy , chemical vapor deposition , metalorganic vapour phase epitaxy , wafer , materials science , substrate (aquarium) , arsine , decomposition , optoelectronics , doping , analytical chemistry (journal) , chemistry , nanotechnology , catalysis , geology , biochemistry , oceanography , organic chemistry , layer (electronics) , phosphine , chromatography

A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers with excellent quality have been grown on GaAs substrate wafers by the decomposition of trimethylgallium (TMGa) and AsH3 in the reactor at reduced pressure and at temperatures in the 600-700°C range. A low AsH3 concentration, 0.7 % in H2, is used as one of the precursors, which has the added advantage that the severe safety precautions always associated with MOCVD systems need not be implemented

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