Direct Cu-on-Ta Electroplating from Ionic Liquids in High Vacuum
Author(s) -
Stijn Schaltin,
Andrey Shkurankov,
Koen Binnemans,
Jan Fransaer
Publication year - 2010
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.3318510
Subject(s) - tantalum , ionic liquid , overpotential , electrolyte , copper , electrochemistry , materials science , electrode , electroplating , ionic bonding , nucleation , ultra high vacuum , inorganic chemistry , vacuum evaporation , deposition (geology) , vapor pressure , evaporation , chemical engineering , analytical chemistry (journal) , chemistry , metallurgy , ion , layer (electronics) , nanotechnology , thin film , catalysis , thermodynamics , engineering , biology , paleontology , biochemistry , chromatography , physics , organic chemistry , sediment
Jan.Fransaer@mtm.kuleuven.be, Tel.: +32 16 32 12 86, Fax: +32 16 32 19 91 Smooth layers of 20 nm of copper have been deposited on a tantalum substrate from ionic liquids under high vacuum conditions. By electrochemical vacuum deposition (EVD) it is possible to achieve extremely low concentrations of oxygen and water, so that the tantalum electrode does not oxidize. Due to the low vapor pressure of ionic liquids, no evaporation of the electrolyte was observed in high vacuum. The wide electrochemical windows of the ionic liquids are advantageous to obtain nucleation densities up to 8 10
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