C Redistribution during Ni Silicide Formation on Si[sub 1−y]C[sub y] Epitaxial Layers | Zendy

ShengLong Lee | Zendy; S. S. Huang | Zendy; HsuCheng Hsu | Zendy; C. W. Nieh | Zendy; Wilman Tsai | Zendy; Cheng-Yao Lo | Zendy; Chun Hung Lai | Zendy; PeiKang Tsai | Zendy; M. Y. Wang | Zendy; Chih-Liang Wu | Zendy; Minglin Lei | Zendy

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C Redistribution during Ni Silicide Formation on Si[sub 1−y]C[sub y] Epitaxial Layers

Author(s) -

ShengLong Lee,

S. S. Huang,

HsuCheng Hsu,

C. W. Nieh,

Wilman Tsai,

Cheng-Yao Lo,

Chun Hung Lai,

PeiKang Tsai,

M. Y. Wang,

Chih-Liang Wu,

Minglin Lei

Publication year - 2010

Publication title -

journal of the electrochemical society

Language(s) - Spanish

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.3276060

Subject(s) - silicide , materials science , redistribution (election) , epitaxy , grain boundary , electrical resistivity and conductivity , thin film , crystallography , economies of agglomeration , silicon , condensed matter physics , metallurgy , layer (electronics) , nanotechnology , chemical engineering , microstructure , chemistry , politics , political science , law , electrical engineering , physics , engineering

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