A Wide Range Temperature Sensor Using SOI Technology | Zendy

Richard L. Patterson | Zendy; Malik Elbuluk | Zendy; Ahmad Hammoud | Zendy

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A Wide Range Temperature Sensor Using SOI Technology

Author(s) -

Richard L. Patterson,

Malik Elbuluk,

Ahmad Hammoud

Publication year - 2009

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.3117407

Subject(s) - silicon on insulator , atmospheric temperature range , materials science , temperature cycling , optoelectronics , timer , electrical engineering , relaxation oscillator , temperature measurement , power consumption , leakage (economics) , operating temperature , silicon , thermal , power (physics) , voltage , engineering , physics , voltage controlled oscillator , quantum mechanics , meteorology , economics , macroeconomics , microcontroller

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

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