Open AccessAtomic Layer Deposition of Lanthanum-Based Ternary Oxides
Author(s) -
Hongtao Wang,
JunJieh Wang,
Roy G. Gordon,
J.M. Lehn,
Huazhi Li,
Daewon Hong,
Deo Shenai
Publication year - 2009
Publication title -
electrochemical and solid-state letters
Language(s) - English
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/1.3074314
Subject(s) - materials science , amorphous solid , ternary operation , crystallite , atomic layer deposition , transmission electron microscopy , lanthanum oxide , layer (electronics) , oxide , dielectric , high κ dielectric , lanthanum , equivalent oxide thickness , deposition (geology) , chemical engineering , analytical chemistry (journal) , composite material , nanotechnology , inorganic chemistry , optoelectronics , crystallography , metallurgy , gate oxide , chemistry , biology , transistor , voltage , quantum mechanics , chromatography , physics , computer science , engineering , paleontology , programming language , sediment
Lanthanum-based ternary oxide La x M 2-x O 3 (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both LaScO 3 and LaLuO 3 films are amorphous while the as-deposited La x Y 2-x O 3 films form a polycrystalline layer/ amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for LaScO 3 , LaLuO 3 , and La 1.23 Y 0.77 O 3 films are ∼23, 28 ± 1, and 17 ± 1.3, respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal SiO 2 with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio ∼80:1.
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