Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor | Zendy

Chang-Jung Kim | Zendy; Jaechul Park | Zendy; Sunil Kim | Zendy; Ihun Song | Zendy; SangWook Kim | Zendy; Youngsoo Park | Zendy; Eunha Lee | Zendy; Anass Benayad | Zendy; JinSeong Park | Zendy

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Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor

Author(s) -

Chang-Jung Kim,

Jaechul Park,

Sunil Kim,

Ihun Song,

SangWook Kim,

Youngsoo Park,

Eunha Lee,

Anass Benayad,

JinSeong Park

Publication year - 2009

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.3067838

Subject(s) - materials science , thin film transistor , x ray photoelectron spectroscopy , amorphous solid , layer (electronics) , auger electron spectroscopy , dry etching , threshold voltage , etching (microfabrication) , oxide , optoelectronics , oxide thin film transistor , transistor , composite material , chemical engineering , analytical chemistry (journal) , voltage , metallurgy , electrical engineering , chemistry , crystallography , physics , chromatography , nuclear physics , engineering

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