Open AccessSilicon Oxide Gate Dielectric on n-Type 4H–SiC Prepared by Low Thermal Budget Anodization Method
Author(s) -
Kai-Chieh Chuang,
JennGwo Hwu
Publication year - 2008
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2938375
Subject(s) - materials science , oxide , capacitor , optoelectronics , thermal conduction , gate oxide , anodizing , dielectric , gate dielectric , annealing (glass) , schottky barrier , time dependent gate oxide breakdown , silicon , voltage , electrical engineering , composite material , diode , metallurgy , aluminium , transistor , engineering
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