Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures | Zendy

Taketomo Sato | Zendy; Akinori Mizohata | Zendy

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Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures

Author(s) -

Taketomo Sato,

Akinori Mizohata

Publication year - 2008

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.2844216

Subject(s) - materials science , layer (electronics) , etching (microfabrication) , nanostructure , porosity , photoelectrochemistry , nanotechnology , chemical engineering , optoelectronics , composite material , electrochemistry , chemistry , electrode , engineering

A photoelectrochemical (PEC) process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode

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