Open AccessEffects of SiN[sub x] Passivation and Gate Metal Roughness on the Performance of On-plastic a-Si:H TFTs
Author(s) -
JianZhang Chen,
K. Cherenack,
C. Tsay,
IChun Cheng,
S. Wagner
Publication year - 2007
Publication title -
electrochemical and solid-state letters
Language(s) - English
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/1.2812443
Subject(s) - kapton , materials science , passivation , thin film transistor , optoelectronics , substrate (aquarium) , subthreshold slope , threshold voltage , surface finish , surface roughness , metal gate , transistor , composite material , voltage , electrical engineering , layer (electronics) , gate oxide , polyimide , oceanography , engineering , geology
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