On the Splitting of High Order Laue Zone Lines in CBED Analysis of Stress in Silicon
Author(s) -
A. Benedetti,
H. Bender,
C. Torregiani
Publication year - 2007
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2432060
Subject(s) - materials science , stress relaxation , silicon , electron diffraction , transmission electron microscopy , diffraction , microelectronics , amorphous solid , epitaxy , crystallography , optics , molecular physics , condensed matter physics , optoelectronics , composite material , chemistry , layer (electronics) , nanotechnology , physics , creep
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom