Brittle and Ductile Fracture Mechanics Analysis of Surface Damage Caused During CMP
Author(s) -
Terry A. Ring,
Paul Feeney,
David Boldridge,
Jaishankar Kasthurirangan,
Shoutian Li,
James A. Dirksen
Publication year - 2007
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2426877
Subject(s) - materials science , brittleness , wafer , chemical mechanical planarization , fracture mechanics , polishing , composite material , fracture (geology) , silicon , brittle fracture , damage mechanics , metallurgy , forensic engineering , structural engineering , finite element method , nanotechnology , engineering
This work reviews the mechanical properties and fracture mechanics of materials important in the manufacture of multilayer interconnects on silicon chips in order to understand surface damage caused during chemical mechanical polishing (CMP). It gives an explanation for chatter marks, surface flaking in interlayer dielectric material, and rolling indenter and plastic plow lines in copper on the wafer surface during CMP of silicon chips.
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