Open AccessKinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process
Author(s) -
J.E. May
Publication year - 1965
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2423671
Subject(s) - silicon , impurity , diffusion , substrate (aquarium) , epitaxy , iodide , deposition (geology) , doping , kinetics , chemical engineering , materials science , chemistry , chemical vapor deposition , analytical chemistry (journal) , inorganic chemistry , nanotechnology , optoelectronics , organic chemistry , thermodynamics , paleontology , physics , oceanography , layer (electronics) , quantum mechanics , sediment , engineering , geology , biology
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