Open AccessThe Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy
Author(s) -
F.E. Rosztoczy,
William W. Stein
Publication year - 1972
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2404411
Subject(s) - heterojunction , epitaxy , liquid phase , materials science , optoelectronics , phase (matter) , engineering physics , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , thermodynamics
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