Material-Inversion Solid-Phase Epitaxy of p+ Si for Elevated Junctions | Zendy

Yann Civale | Zendy; Lis K. Nanver | Zendy; H. Schellevis | Zendy

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Material-Inversion Solid-Phase Epitaxy of p⁺ Si for Elevated Junctions

Author(s) -

Yann Civale,

Lis K. Nanver,

H. Schellevis

Publication year - 2006

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.2356268

Subject(s) - epitaxy , materials science , doping , ohmic contact , optoelectronics , substrate (aquarium) , diode , silicon , analytical chemistry (journal) , layer (electronics) , nanotechnology , chemistry , geology , chromatography , oceanography

A solid-phase epitaxy (SPE) process that forms ultra-shallow abrupt aluminum p+-doped Si islands has been studied for deposition temperatures from 400 to 500 ºC. The growth process gives a very uniform composition of the p+ layer and an abrupt doping transition to the Si substrate. Low ohmic contacting and near-ideal diode characteristics are reliably obtained

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