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© 2006 The Electrochemical Society, Inc. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).A method for performing top surface imaging  TSI  on a single polymeric photoresist film using area selective atomic layer deposition  ALD  is presented. In this method, exposure of the polymer thin film creates reactive hydroxyl sites on the film surface in the exposed areas that subsequently act as nucleation and growth sites for deposition of metal oxide features using a chemically selective atomic layer deposition process. Specifically, it is shown that titanium isopropoxide and water can be used as ALDprecursors in conjunction with a chemically amplified photoresist film, formulated using a protected polymer  poly tert-butyl methacrylate   and a photoacid generator  triphenylsulfonium tris perfluoromethanesulfonyl methide , to successfully perform such an area selective ALD TSI process. Using this material set and methodology, micrometer-scale photoresist features aredefined, metal oxide patterns are produced, and these patterns have been transferred through the polymer film via plasma etching. One unique feature of this TSI process is that it has been achieved without requiring a descum etch, which is commonly needed with other TSI methods, due to the highly selective nature of the ALD process

A Top Surface Imaging Method Using Area Selective ALD on Chemically Amplified Polymer Photoresist Films