Growth Kinetics and Electrical Characteristics of Thermal Silicon Dioxide Grown at Low Temperatures
Author(s) -
K. H. Lee,
W. H. Liu,
S.A. Campbell,
Indrani Banerjee
Publication year - 1993
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2221076
Subject(s) - silicon dioxide , kinetics , thermal oxidation , silicon , growth rate , oxide , dielectric , materials science , hydrogen , thermal , chemistry , analytical chemistry (journal) , thermodynamics , metallurgy , environmental chemistry , optoelectronics , physics , geometry , mathematics , organic chemistry , quantum mechanics
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