Open AccessParameter Dependence of RIE Induced Radiation Damage in Silicon Dioxide
Author(s) -
L. M. Ephrath,
D. J. DiMaria,
F. L. Pesavento
Publication year - 1981
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2127261
Subject(s) - reactive ion etching , materials science , trapping , silicon dioxide , annealing (glass) , oxide , optoelectronics , silicon , irradiation , electrode , radiation damage , capacitor , wafer , analytical chemistry (journal) , etching (microfabrication) , radiation , voltage , chemistry , nanotechnology , composite material , optics , electrical engineering , metallurgy , physics , ecology , engineering , biology , layer (electronics) , chromatography , nuclear physics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom