Surface Charging Effects during Photoanodic Dissolution of n ‐ GaAs Electrodes | Zendy

J. J. Kelly | Zendy; Peter H. L. Notten | Zendy

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Surface Charging Effects during Photoanodic Dissolution of n ‐ GaAs Electrodes

Author(s) -

J. J. Kelly,

Peter H. L. Notten

Publication year - 1983

Publication title -

journal of the electrochemical society

Language(s) - French

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.2119612

Subject(s) - dissolution , electrode , oxide , electrolyte , charge density , semiconductor , surface charge , charge (physics) , materials science , intensity (physics) , analytical chemistry (journal) , chemistry , optoelectronics , optics , chemical physics , physics , metallurgy , chromatography , quantum mechanics

Etude de la dissolution photoanodique de GaAs-n dans un electrolyte constitue d'une solution d'EDTA 0,1M, a pH 5, ou la formation d'oxyde peut se produire sous intensite lumineuse plus elevee. Etude a l'aide de mesures d'impedance de l'influence de l'illumination et de la formation du film sur la charge et la distribution du potentiel de l'electrode. Mise au point d'un modele tenant compte des etats de charge positive a l'interface semiconducteur-oxyde

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