Open AccessCarrier Lifetime Reduction in Silicon by Proton Implantation Through MOS Structures
Author(s) -
A. MogroCampero,
R.P. Love
Publication year - 1984
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2115382
Subject(s) - silicon , annealing (glass) , materials science , carrier lifetime , doping , ion implantation , oxide , penetration (warfare) , proton , degradation (telecommunications) , ion , optoelectronics , analytical chemistry (journal) , chemistry , electronic engineering , composite material , metallurgy , physics , engineering , organic chemistry , chromatography , operations research , quantum mechanics
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