Open AccessRoughness of Silicon Surface Heated in Hydrogen Ambient
Author(s) -
Hitoshi Habuka,
Hitoshi Tsunoda,
Masanori Mayusumi,
Naoto Tate,
Masatake Katayama
Publication year - 1995
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.2048694
Subject(s) - silicon , surface roughness , wafer , hydrogen , oxide , surface finish , materials science , atmospheric pressure , silicon dioxide , haze , analytical chemistry (journal) , composite material , chemistry , nanotechnology , metallurgy , meteorology , organic chemistry , physics , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom