Synthesis of Si-Ge Oxide Nanowires via the Transformation of Si-Ge Thin Films with Self-Assembled Au Catalysts | Zendy

JrHau He | Zendy; Tsung-Han Wu | Zendy; ChengLun Hsin | Zendy; LiJen Chen | Zendy; Zhong Lin Wang | Zendy

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Synthesis of Si-Ge Oxide Nanowires via the Transformation of Si-Ge Thin Films with Self-Assembled Au Catalysts

Author(s) -

JrHau He,

Tsung-Han Wu,

ChengLun Hsin,

LiJen Chen,

Zhong Lin Wang

Publication year - 2005

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.2001792

Subject(s) - materials science , nanowire , annealing (glass) , chemical engineering , oxide , thin film , nanotechnology , silicon , catalysis , doping , nanoparticle , pulmonary surfactant , optoelectronics , composite material , metallurgy , organic chemistry , chemistry , engineering

A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400°C annealing removes the surface surfactant; 800°C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally, a 1075°C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping. © 2005 The Electrochemical Society. DOI: 10.1149/1.2001792 All rights reserved.

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