Open AccessEtch Characteristics of Al[sub 2]O[sub 3] in ICP and MERIE Plasma Etchers
Author(s) -
S. Tegen,
P. Moll
Publication year - 2005
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1865912
Subject(s) - selectivity , sputtering , wafer , inductively coupled plasma , etching (microfabrication) , plasma , analytical chemistry (journal) , plasma etching , chemistry , reactive ion etching , etch pit density , ion , materials science , thin film , optoelectronics , layer (electronics) , nanotechnology , chromatography , organic chemistry , catalysis , physics , quantum mechanics
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