Rapidly Selective Growth of Nanoparticles by Electron-Beam and Optical Lithographies with Chemically Amplified Resists | Zendy

HsuenLi Chen | Zendy; YingHao Chu | Zendy; ChienLin Kuo | Zendy; F. K. Liu | Zendy; FuHsiang Ko | Zendy; T.C. Chu | Zendy

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Rapidly Selective Growth of Nanoparticles by Electron-Beam and Optical Lithographies with Chemically Amplified Resists

Author(s) -

HsuenLi Chen,

YingHao Chu,

ChienLin Kuo,

F. K. Liu,

FuHsiang Ko,

T.C. Chu

Publication year - 2005

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.1845051

Subject(s) - resist , materials science , cathode ray , nanoparticle , electron beam lithography , photochemistry , electron , nanotechnology , optoelectronics , chemistry , physics , layer (electronics) , quantum mechanics

Rapidly and precisely selective growth of self-assembled nanoparticles using an electron-beam or optical exposure system with commercial chemically amplified resists was demonstrated. The required exposure dosage was lessthan 10 μc/cm 2 for patterning chemically amplified resists. By immersing the patterned resist sample in the nanoparticle colloidal solution, nanoparticles were selectively self-assembled on the (3-aminopropyl)trimethoxysilane layer, which was partially covered by the patterned resist layer. The selective growth area can be performed from several hundred micrometers to sub-50 nm. This method has great potential to be used for rapidly selective growth of various nanoparticles or nanomaterials.

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