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Current Evolution of Electrodeposited Copper Bumps with Photoresist Angle
Author(s) -
Kazuo Kondo,
Keisuke Fukui
Publication year - 1998
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1838354
Subject(s) - bumping , photoresist , cathode , copper , vortex , overpotential , materials science , current (fluid) , diffusion , chemistry , composite material , mechanics , condensed matter physics , electrode , metallurgy , thermodynamics , physics , electrochemistry , layer (electronics)

We report the current distribution of copper bumps with photoresist sidewall angles. The role of outer diffusion, vortices, and penetration flow within the cavity is discussed, with numerical fluid dynamics computed in order to prevent side bumping. The current distributions were calculated at the diffusion controlled overpotential. The mass transfer-limited current distribution showed that a zero or negative angle reduced diffusion from the outer surroundings and enhanced vortex formation at the cathode corners. Reduction in the diffusion and enhancement in vortices reduced current at the cathode corners and prevented side bumping.

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