The Influence of Precleaning Process on the Gate Oxide Film Fabricated by Electron Cyclotron Resonance Plasma Oxidation | Zendy

KowMing Chang | Zendy; ChiiHorng Li | Zendy; FuJier Fahn | Zendy; JungYu Tsai | Zendy; TaHsun Yeh | Zendy; ShihWei Wang | Zendy; JiYi Yang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

The Influence of Precleaning Process on the Gate Oxide Film Fabricated by Electron Cyclotron Resonance Plasma Oxidation

Author(s) -

KowMing Chang,

ChiiHorng Li,

FuJier Fahn,

JungYu Tsai,

TaHsun Yeh,

ShihWei Wang,

JiYi Yang

Publication year - 1997

Publication title -

journal of the electrochemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.1837401

Subject(s) - electron cyclotron resonance , plasma , oxide , reliability (semiconductor) , materials science , process (computing) , analytical chemistry (journal) , electron , chemistry , atomic physics , metallurgy , computer science , environmental chemistry , nuclear physics , thermodynamics , power (physics) , physics , operating system

The influence of the precleaning process on the characteristics of SiO 2 film grown by using electron cyclotron resonance (ECR) plasma oxidation at room temperature is presented in this work. We find that the growth rate, electrical properties, and reliability of the ECR plasma grown oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grown oxide. The plasma damage is also discussed. We find that plasma oxidation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and reliability characteristics are obtained by this precleaning technique.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research