Characteristics of Top‐Gate Polysilicon Thin‐Film Transistors Fabricated on Fluorine‐Implanted and Crystallized Amorphous Silicon Films | Zendy

Chien Kuo Yang | Zendy; Tan Fu Lei | Zendy; Chung Len Lee | Zendy

Open Access

Characteristics of Top‐Gate Polysilicon Thin‐Film Transistors Fabricated on Fluorine‐Implanted and Crystallized Amorphous Silicon Films

Author(s) -

Chien Kuo Yang,

Tan Fu Lei,

Chung Len Lee

Publication year - 1996

Publication title -

journal of the electrochemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.1837202

Subject(s) - thin film transistor , materials science , polysilicon depletion effect , polycrystalline silicon , amorphous solid , passivation , ion implantation , silicon , fluorine , optoelectronics , secondary ion mass spectrometry , amorphous silicon , layer (electronics) , transistor , nanotechnology , crystalline silicon , ion , gate oxide , metallurgy , electrical engineering , chemistry , crystallography , engineering , organic chemistry , voltage

This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline-silicon (polysilicon) thin-film transistors (TFTs) fabricated on fluorine-implanted-then-crystallized amorphous silicon films. Amorphous silicon films of two thicknesses were implanted with different energies and various dosages of fluorine, and studied using transmission electron microscopy (TEM) and secondary-ion mass spectrometry (SIMS). The electrical characteristics of TFTs fabricated on the films were correlated with the results of TEM and SIMS. It was found that field-effect mobilities of both n- and p-channel devices were improved by the fluorine implantation thanks to the enhanced grain size and the fluorine passivation effect. For the p-channel device, the fluorine implantation did not improve the subthreshold swing and even degraded it after hydrogenation. This result was thought to be caused by the fluorine-induced negative charges in oxides. However, a thin active layer and a deep implantation reduced this degradation.

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