Open AccessThe Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation
Author(s) -
J. L. Benton,
P.A. Stolk,
D. J. Eaglesham,
D. C. Jacobson,
Jay Cheng,
J. M. Poate,
S. M. Myers,
T. E. Haynes
Publication year - 1996
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1836651
Subject(s) - getter , boron , ion implantation , silicon , materials science , deep level transient spectroscopy , impurity , doping , fermi level , analytical chemistry (journal) , ion , optoelectronics , radiochemistry , chemistry , nuclear physics , physics , organic chemistry , chromatography , electron
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