Oxide-Thickness-Dependent Suboxide Width and Its Effect on Inversion Tunneling Current | Zendy

YenPo Lin | Zendy; JennGwo Hwu | Zendy

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Oxide-Thickness-Dependent Suboxide Width and Its Effect on Inversion Tunneling Current

Author(s) -

YenPo Lin,

JennGwo Hwu

Publication year - 2004

Publication title -

journal of the electrochemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.258

H-Index - 271

eISSN - 1945-7111

pISSN - 0013-4651

DOI - 10.1149/1.1813653

Subject(s) - suboxide , oxide , materials science , x ray photoelectron spectroscopy , biasing , quantum tunnelling , diode , current (fluid) , analytical chemistry (journal) , wafer , condensed matter physics , optoelectronics , chemistry , voltage , nuclear magnetic resonance , electrical engineering , metallurgy , physics , chromatography , engineering

Suboxide between SiO 2 and Si examined by current-voltage (I-V) measurement was found to exhibit the thickness-dependent inversion current property. In this work, oxides with thickness ranging from 20 to 40 A were grown on a single wafer. It was found that in gate injection bias, currents decrease with oxide thickness (T ox ). However, in the substrate injection region, currents saturate and the saturated levels increase with T ox . From the X-ray photoelectron spectroscopy results, suboxide width was observed to increase with T ox . We believe the minority carriers generated from the suboxide region contributes to the additional current source that lead to the polarity-dependent I-V characteristics in MOS diode.

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