Evidence of Mn Occupation of Ga Site in Ferromagnetic (Ga, Mn)N Semiconductor Observed by EXAFS | Zendy

Jeong Min Baik | Zendy; Sanguk Kim | Zendy; Yang Mo Koo | Zendy; Tae Won Kang | Zendy; JongLam Lee | Zendy

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Evidence of Mn Occupation of Ga Site in Ferromagnetic (Ga, Mn)N Semiconductor Observed by EXAFS

Author(s) -

Jeong Min Baik,

Sanguk Kim,

Yang Mo Koo,

Tae Won Kang,

JongLam Lee

Publication year - 2004

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.1813365

Subject(s) - extended x ray absorption fine structure , ferromagnetism , materials science , magnetic semiconductor , impurity , ion , semiconductor , manganese , absorption (acoustics) , crystallography , analytical chemistry (journal) , absorption spectroscopy , condensed matter physics , chemistry , metallurgy , optoelectronics , optics , physics , organic chemistry , chromatography , composite material

The local structure of Mn impurities in a ferromagnetic (Ga, Mn)N semiconductor was investigated using extended X-ray absorption fine structure (EXAFS). The ferromagnetic signal increased and maintained up to room temperature as N ions were implanted into Mn-implanted GaN. The X-ray results showed that Mn ions occupied Ga sites to form (Ga, Mn) N semiconductor. The Mn concentration occupying Ga sites increased from 2.5 to 3.8% and the formation of Mn-N compounds such as Mn6N2.58 and Mn3N2 was prohibited by implanting N atoms. As a result, the N-vacancies reduced and net hole concentration increased, resulting in the enhancement of ferromagnetic property.close2

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