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The local structure of Mn impurities in a ferromagnetic (Ga, Mn)N semiconductor was investigated using extended X-ray absorption fine structure (EXAFS). The ferromagnetic signal increased and maintained up to room temperature as N ions were implanted into Mn-implanted GaN. The X-ray results showed that Mn ions occupied Ga sites to form (Ga, Mn) N semiconductor. The Mn concentration occupying Ga sites increased from 2.5 to 3.8% and the formation of Mn-N compounds such as Mn6N2.58 and Mn3N2 was prohibited by implanting N atoms. As a result, the N-vacancies reduced and net hole concentration increased, resulting in the enhancement of ferromagnetic property.close2

Evidence of Mn Occupation of Ga Site in Ferromagnetic (Ga, Mn)N Semiconductor Observed by EXAFS