Open AccessAdditives for Superconformal Electroplating of Ag Thin Film for ULSIs
Author(s) -
Eung Jin Ahn,
Jae Jeong Kim
Publication year - 2004
Publication title -
electrochemical and solid-state letters
Language(s) - English
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/1.1793811
Subject(s) - electroplating , thiourea , copper interconnect , materials science , electrolyte , electrochemistry , layer (electronics) , benzotriazole , chemical engineering , thin layer , supporting electrolyte , thin film , nanotechnology , inorganic chemistry , metallurgy , electrode , organic chemistry , chemistry , engineering
For Ag electroplating in a damascene structure, two additives were tried in the electrolyte composed of KAg(CN) 2 and KCN. One additive, thiourea, played a role as a suppressor and a brightener on a Ag seed layer. The other additive, benzotriazole, worked as an inhibitor on a Cu seed layer whereas it acted as an accelerator on the Ag seed layer. When these two additives were added to the electrolyte, the superconformal electroplating of Ag thin film for ultralarge scale integrateds (ULSIs) was accomplished successfully without defects in the damascene structure with a width of 400 nm and an aspect ratio was 4.
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