Open AccessGrowth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides
Author(s) -
Wei-Jian Liao,
Yi-Lin Yang,
Shun-Cheng Chuang,
JennGwo Hwu
Publication year - 2004
Publication title -
journal of the electrochemical society
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1783907
Subject(s) - anodizing , materials science , oxide , dielectric strength , time dependent gate oxide breakdown , dielectric , silc , leakage (economics) , optoelectronics , thermal oxidation , gate oxide , annealing (glass) , gate dielectric , voltage , composite material , electronic engineering , electrical engineering , metallurgy , aluminium , transistor , economics , macroeconomics , engineering
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