Open AccessMOCVD of Tungsten Nitride Films Using W(CO)[sub 6] and NH[sub 3] for Cu Diffusion Barrier
Author(s) -
Brad H. Lee,
Kijung Yong
Publication year - 2004
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1781174
Subject(s) - metalorganic vapour phase epitaxy , diffusion barrier , tungsten , chemical vapor deposition , amorphous solid , analytical chemistry (journal) , materials science , crystallite , annealing (glass) , nitride , atmospheric temperature range , sheet resistance , chemistry , crystallography , nanotechnology , metallurgy , epitaxy , physics , layer (electronics) , chromatography , meteorology
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