A Method for Fabricating a Superior Oxide/Nitride /Oxide Gate Stack | Zendy

TingChang Chang | Zendy; Shubin Yan | Zendy; PoTsun Liu | Zendy; M. C. Wang | Zendy; Simon M. Sze | Zendy

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A Method for Fabricating a Superior Oxide/Nitride /Oxide Gate Stack

Author(s) -

TingChang Chang,

Shubin Yan,

PoTsun Liu,

M. C. Wang,

Simon M. Sze

Publication year - 2004

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.1738473

Subject(s) - materials science , oxide , nitride , silicon nitride , layer (electronics) , chemical vapor deposition , stack (abstract data type) , silicon oxide , optoelectronics , gate oxide , silicon , locos , non volatile memory , nanotechnology , voltage , metallurgy , electrical engineering , transistor , computer science , engineering , programming language

A superior oxide/nitride/oxide (ONO) gate stack was demonstrated. High density plasma chemical vapor deposition was used to deposit the silicon nitride layer instead of the conventional low-pressure chemical vapor deposition for silicon/oxide/nitride/oxide/ silicon technology. The densified nitride layer was performed by high-temperature dry oxidation to form a thermally grown blocking oxide layer on the silicon nitride rather than a deposited oxide layer. The ONO gate stack shows large memory window, high breakdown voltage, and reliable endurance characteristics, which is a potential candidate for future nonvolatile memory technology.

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