Electrical Characterization of Impurity-Free Disordered p-Type GaAs | Zendy

Prakash N. K. Deenapanray | Zendy; Victoria A. Coleman | Zendy; C. Jagadish | Zendy

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Electrical Characterization of Impurity-Free Disordered p-Type GaAs

Author(s) -

Prakash N. K. Deenapanray,

Victoria A. Coleman,

C. Jagadish

Publication year - 2003

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.1543335

Subject(s) - materials science , impurity , deep level transient spectroscopy , oxide , layer (electronics) , gallium , capacitance , analytical chemistry (journal) , non equilibrium thermodynamics , optoelectronics , nanotechnology , chemistry , electrode , silicon , metallurgy , physics , organic chemistry , chromatography , quantum mechanics

Impurity-free disordered p-GaAs epi layers by SiO2 or native oxide capping are characterized using deep level transient spectros- copy ~DLTS! and capacitance-voltage measurements. Samples, including an uncapped epi layer for reference, were annealed at 900°C for 30 s under Ar ambient. Disordering resulted in an increase in the free hole concentration with the effect being more pronounced for the SiO2 capping layer. DLTS measurements revealed the corresponding increase in the concentrations of both the Cu and Zn-related deep levels in the disordered epi layers. We relate these changes in electrical properties to segregation effects resulting from the nonequilibrium injection of excess gallium vacancies in the disordered p-type epi layers. We discuss the relative

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