Thermal Hydrosilylation of Undecylenic Acid with Porous Silicon
Author(s) -
Rabah Boukherroub,
James T. C. Wojtyk,
Danial D. M. Wayner,
D. J. Lockwood
Publication year - 2002
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1432679
Subject(s) - hydrosilylation , porous silicon , monolayer , covalent bond , chemical bond , chemistry , molecule , polymer chemistry , silicon , materials science , x ray photoelectron spectroscopy , yield (engineering) , photochemistry , chemical engineering , organic chemistry , nanotechnology , catalysis , composite material , engineering
The thermal reaction of undecylenic acid with a hydrogen-terminated porous silicon surface takes place at 95\ub0C to yield an organic monolayer covalently attached to the surface through Si-C bonds. The acid terminal group remains intact and is not affected by the chemical process. Under the same conditions, alcohols break the Si-Si back bonds of the PSi matrix. In contrast, the acid function does not react with either the Si-H or the Si-Si bonds of the PSi surface and the reaction takes place at the terminal Formula double bond of the molecule. When the reaction was carried out with decanoic acid, under the same conditions, the reaction was not complete. The functionalized surfaces were characterized using transmission infrared and X-ray photoelectron spectroscopies. The effect of the chemical process on the photoluminescence has been studied, and the stability against corrosion in 100% humidity was verified using chemography. We have demonstrated that the derivatized surface with undecylenic acid can be activated by a simple chemical route using N-hydroxysuccimide in the presence of N-ethyl-N \u2032-(3-dimethylaminopropyl) carbodiimide hydrochloride.Peer reviewed: NoNRC publication: Ye
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