Open AccessSelective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: I. Deposition Parameters
Author(s) -
R. Soman,
Arnold Reisman,
D. Temple,
R. Alberti
Publication year - 2000
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1.1393445
Subject(s) - disproportionation , wafer , deposition (geology) , nucleation , chemical vapor deposition , oxide , analytical chemistry (journal) , thin film , hydrogen , chemistry , volumetric flow rate , materials science , nanotechnology , thermodynamics , catalysis , organic chemistry , paleontology , sediment , biology , physics
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