A New Approach for the Study of Chemical Mechanical Polishing
Author(s) -
Derik DeVecchio
Publication year - 1999
Publication title -
electrochemical and solid-state letters
Language(s) - English
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/1.1390967
Subject(s) - chemical mechanical planarization , atomic force microscopy , materials science , polishing , electrode , electrochemistry , nanotechnology , scratching , composite material , chemistry
The process of chemical mechanical polishing (CMP) can be studied using in situ atomic force microscopy (AFM) by intentionally using a high tip/sample interaction force. The nominal removal rate of Al during AFM scratching is studied under a range of conditions including varying tip/sample force, solution pH, and electrode potential. This approach should be useful for CMP process development and furthering the fundamental understanding of CMP mechanisms.
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