Low k, Porous Methyl Silsesquioxane and Spin-On-Glass | Zendy

Abbe T. Kohl | Zendy; Richard Mimna | Zendy; Robert A. Shick | Zendy; Larry F. Rhodes | Zendy; Zhong Lin Wang | Zendy; Paul A. Kohl | Zendy

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Low k, Porous Methyl Silsesquioxane and Spin-On-Glass

Author(s) -

Abbe T. Kohl,

Richard Mimna,

Robert A. Shick,

Larry F. Rhodes,

Zhong Lin Wang,

Paul A. Kohl

Publication year - 1999

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.1390740

Subject(s) - silsesquioxane , materials science , siloxane , dielectric , polymer , porosity , curing (chemistry) , chemical engineering , thermal decomposition , polymer chemistry , composite material , organic chemistry , chemistry , optoelectronics , engineering

Low dielectric constant, porous silica was made from commercially available methyl silsesquioxane (MSQ) by the addition of a sacrificial polymer, substituted norbornene polymer containing triethoxysilyl groups (NB), to the MSQ. The silsesquioxane-NB polymer film mixture was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ exhibited a closed-pore structure. The concentration of NB in the MSQ affected the number of pores but not their size. Porous films were also created in a methyl siloxane spin-on-glass and its dielectric constant was lowered from 3.1 to 2.7. Infrared spectroscopy was used to follow the curing of the MSQ and decomposition of the NB. © 1999 The Electrochemical Society. S1099-0062(98)09-026-9. All rights reserved.

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