Open AccessStudy of Si(100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices
Author(s) -
D. Bauza,
N. Guenifi
Publication year - 2020
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/09701.0083ecst
Subject(s) - materials science , mosfet , optoelectronics , transistor , forming gas , annealing (glass) , acceptor , silicon on insulator , voltage , silicon , electrical engineering , condensed matter physics , physics , engineering , composite material
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