Open AccessGrowth and Memory Effect of Ge in GaAs Epilayers Grown in UHV Environment Using IBGe
Author(s) -
Alex Brice Poungoué Mbeunmi,
Roxana Arvinte,
Mohammad Reza Aziziyan,
Richard Arès,
S. Fafard,
Abderraouf Boucherif
Publication year - 2019
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/09301.0113ecst
Subject(s) - germanium , materials science , optoelectronics , molecular beam epitaxy , germane , epitaxy , nanotechnology , silicon , layer (electronics)
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